In this work, carbon nitride (C3N4) nanoparticles (NPs) were synthesized by pulse laser ablation of graphite in ammonium solution, and deposited on silicon substrates by spray. Fourier transform infrared spectroscopy (FTIR), UV-visible spectrophotometer and transmission electron microscopy (TEM) were used to study bonding, absorption, size and morphology of the produce NPs. The FTIR absorption peaks at 2121.6, 1631.7 and 1384 cm
1 stretching vibration bond, it is inferred for the CN, C¼N and C–N, respectively. Bonds suggests the formation, C3N4 NPs. UV absorption peaks coincide with the electronic transitions corresponding to the formation, C3N4 NPs with 3.98 eV optical bandgap. The TEM show the aggregation of the C3N4 NPs with size ranges from 4 to 83 nm, and also the leaf-like structure are shown in the structure of C3N4 suspension. High performance rectifying C3N4/Si heterojunction with a rectifying ratio exceeding 345 at V ¼ 5 V was obtained, with high photoresponsivity of 2.33 A/W at 600 nm.The results show that C3N4 NPs on silicon substrates will act as very good candidates for making high e±ciency photodiodes.
Keywords: Carbon nitride; laser ablation in liquid; optoelectronic application.
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